1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.12 - rev.a 10v drive nch mosfet R5205CND ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low resistance. 2) high speed switching. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 2500 R5205CND ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 525 v gate-source voltage v gss ? 30 v continuous i d ? 5a pulsed i dp ? 20 a continuous i s 5a pulsed i sp 20 a avalanche current i as 2.5 a avalanche energy e as 1.6 mj total power dissipation (tc=25 ? c) p d 40 w channel temperature tch 150 ? c range of storage temperature tstg -55 to +150 ? c *1 limited only by maximum temperature allowed. *2 pw ? 10 ? s duty cycle ? 1% *3 l 500 ? h, v dd =50v, rg=25 ? starting tch=25 ? c ? thermal resistance symbol limits unit channel to case rth (ch-c) 3.13 ? c / w * limited only by maximum temperature allowed. parameter type source current (body diode) drain current parameter *2 *3 *3 * *1 *1 *2 ? 1 body diode ? 2 esd protection diode (1) gate (2) drain (3) source ? 1 ? 2 (1) (2) (3) cpt3 (1)gate (2)drain (3)source 6.5 2.3 (2) (3) 0.65 0.9 (1) 0.75 2.3 0.9 5.1 1.5 5.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 abbreviated symbol : r5205c
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.12 - rev.a data sheet R5205CND ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 25v, v ds =0v drain-source breakdown voltage v (br)dss 525 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --100 ? av ds =525v, v gs =0v gate threshold voltage v gs (th) 2.5 - 4.5 v v ds =10v, i d =1ma forward atransfer admittance l y fs l 1.5 2.5 - s v ds =10v, i d =2.5a input capacitance c iss - 320 - pf v ds =25v output capacitance c oss - 180 - pf v gs =0v reverse transfer capacitance c rss - 15 - pf f=1mhz turn-on delay time t d(on) -20-nsv dd 250v, i d =2.5a rise time t r -25-nsv gs =10v turn-off delay time t d(off) -40-nsr l =100 ? fall time t f -20-nsr g =10 ? total gate charge q g - 10.8 - nc v dd 250v, i d =5a gate-source charge q gs -3.2-ncv gs =10v r l =50 ? gate-drain charge q gd -4.4-ncr g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd --1.5vi s =5a, v gs =0v *pulsed parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =2.5a, v gs =10v -1.31.6 * * * * * * * * * *
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.12 - rev.a data sheet R5205CND ? electrical characteristic curves ? 0.001 0.01 0.1 1 10 01234567 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.2 typical transfer characteristics 0.01 0.1 1 10 100 0.01 0.1 1 10 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.4 static drain-source on-state y y y resistance vs. drain current 0.01 0.1 1 10 0 0.5 1 1.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.8 reverse drain current vs. sourse-drain voltage 0 1 2 3 4 5 0 5 10 15 ta=25c pulsed i d = 2.5a i d = 5.0a fig.5 static drain-source on-state resistance vs. gate source 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 v ds = 10v pulsed ta= -25c ta= 25c ta= 75c ta= 125c fig.7 forward transfer admittance y y y vs. drain current 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c oss c rss ta= 25c f= 1mhz v gs = 0v c iss fig.9 typical capacitance vs. drain-source voltage 0.01 0.1 1 10 100 0.1 1 10 100 1000 tc = 25c single pulse dc operation p w = 100us p w = 1ms operation in this area is limited by r ds(on) o p e r a t i o n i n t h i s a r e a i s l i m i t e d b y r d s ( o n ) operation in this area is limited by r ds(on) p w = 10ms fig.1 maximum safe operating aera fig.6 static drain-source on-state resistance vs. channel 0 1 2 3 4 5 -50 0 50 100 150 v gs = 10v pulsed i d = 2.5a i d = 5.0a fig.3 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : vds ( v ) drain current : i d (a) drain current : i d (a) static drain-source on-state resistance : r ds(on) ( ) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-state resistance : r ds(on) ( ) channel temperature: t ch (c) static drain-source on-state resistance : r ( ) ds(on) drain current : i d (a) forward transfer admittance : |yfs| (s) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a)
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.12 - rev.a data sheet R5205CND 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth (ch-a) (t) = a ? ?; e ? rth (ch-a) rth (ch-a) = 133.2c/w 10 100 1000 0.1 1 10 100 ta= 25c di / dt= 100a / s v gs = 0v pulsed fig.11 reverse recovery time vs.reverse drain current 0 5 10 15 0 5 10 15 ta= 25c v dd = 250v i d = 5a r g = 10 pulsed fig.10 dynamic input characteristics 1 10 100 1000 10000 0.01 0.1 1 10 t f ta= 25c v dd = 250v v gs = 10v r g = 10 pulsed t d(off) t d(on) t r fig.12 switching y characteristics fig.13 normalized transient thermal resistance vs. pulse width total gate charge : q g (nc) gate-source voltage : v gs (v) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient therma l resistance : r (t)
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.12 - rev.a data sheet R5205CND ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v d s d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)ds s i as 2 l e as = v (br)dss - v dd v (br)dss 1 2
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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